ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphous Al2O3 thin films were grown on Si(100) and glass substrates by low-pressure metalorganic chemical vapor deposition using aluminum acetylacetonate and water vapor as source materials. Water vapor played an important role in the oxidation process and produced carbon-free, pure Al2O3 films. The deposition temperature could be lowered to 230 °C. The films were characterized by means of x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, and ellipsometry.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108838