ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Be-doped cubic boron nitride (c-BN) powders, prepared at 5 GPa and 1700 °C by using Li3BN2 as a catalyst, were sintered at 7.7 GPa and 2100 °C without the addition of any sintering aids. The polycrystals so obtained were p-type semiconductors as determined by the electric and thermoelectric methods. Nonlinear current-voltage characteristics, showing similar behavior to that of varistors, were observed by a four-probe method. The activation energy of the resistivity in the ohmic region at temperatures from 25 to 700 °C was about 0.3 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108887