Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 2833-2835
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A detailed in situ study by infrared phase-modulated ellipsometry of interfaces between plasma-deposited amorphous silicon (a-Si:H) and silicon nitride (a-SiNx) is presented. The structure of the interface is affected by the deposition sequence. A behavior compatible with a sharp interface is observed when a-SiNx is deposited on top of a-Si:H, the underlayer material being very weakly influenced by the deposition of the overlayer. In contrast, a graded transition is observed when a-SiNx is deposited first. In the latter case, the infrared measurements directly reveal a nitrogen tail incorporated in the first monolayers of a-Si:H (10–20 A(ring) thick). The formation mechanisms of the interfaces are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109225
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