Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1967-1969
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A so-called "three-partial-rates'' model of Si1−x Gex chemical vapor deposition that describes total growth rate as well as layer composition is applied to experimental data obtained at atmospheric pressure in hydrogen along with germane. The kind of silicon source gas was varied in that investigation using silane, dichlorosilane, and disilane, whereas all the other deposition conditions were maintained constant. Theoretical expectations drawn on the background of the above model agree fairly well with the experimental findings. All the experimental results this letter is related to were independently obtained and published [T. I. Kamins and D. J. Meyer, Appl. Phys. Lett. 61, 190 (1992)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109505
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