ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The concentration and mobility of the two-dimensional electron gas present at the interface between strain-relaxed, lattice matched, InyAl1−yAs/InxGa1−xAs(x 〈 0.45), modulation doped heterojunctions grown by means of compositionally step-graded buffer layers on GaAs substrates, were measured at room temperature and at 77 K. The composition dependence of the electron density is attributed to the dependence of the band-gap energy of InxGa1−xAs and that of InyAl1−yAs on x, with a conduction band offset, ΔEc∼0.67ΔEg. The room temperature electron mobility increases from 9×103 cm2/V s for x=0.07 to 1.05×104 cm2/V s for x=0.45. Such strain-relaxed heterostructures have higher electron mobilities than similar pseudomorphic structures with the same sheet electron concentration.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107686
