Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 557-559
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary-ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520 °C, the segregation length was observed to increase from 0.8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107835
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