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Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxy (1992)

Armstrong, J. V. ; Farrell, T. ; Boyd, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 2770-2772

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A 21 layer AlAs/Al0.4Ga0.6As multilayer structure, designed as a Bragg reflector centered at 670 nm, has been grown by chemical beam epitaxy. The growth was monitored in real time by dynamic optical reflectivity (DOR) using a 670 nm semiconductor diode laser. The resultant DOR trace was compared to a computer simulation for the growth structure and good agreement is obtained using layer thicknesses measured by transmission electron microscopy. The wavelength dependent reflectivity of the Bragg reflector was measured using a grating spectrometer and good agreement is obtained to a computer simulation once the dispersive complex refractive index is taken into account.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108085

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