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Carrier diffusion effects in time-resolved photoluminescence (1992)

Bailey, D. W. ; Stanton, C. J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 880-882

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We model time-resolved photoluminescence in GaAs using an ensemble Monte Carlo method coupled with a k⋅p calculation of the band structure. We show that on a picosecond scale, carrier diffusion perpendicular to the layer significantly reduces the density at the surface and consequently has a first-order effect on luminescence measurements. To illustrate this we compare the calculated luminescence, with and without diffusion, to experimental data.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106492

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