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Formation of TiN-encapsulated copper structures in a NH3 ambient (1992)

Li, Jian ; Mayer, J. W. ; Shacham-Diamand, Y. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 2983-2985

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550 °C in a NH3 ambient. A fast heating rate (70 °C/min) to 550 °C can effectively suppress the formation of Cu3Ti and enhance the TiNx formation near the surface of the copper film. Oxygen incorporation in the TiNx layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106783

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