Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2267-2269
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The lateral distribution of focused-ion-beam implanted Be atoms in GaAs has been studied by measuring the electrical resistivity in grating structures. The gratings were implanted at 230 and 260 keV with periods from 0.04 to 3 μm oriented both parallel and perpendicular to the direction of current flow. In the parallel case an initially n-type conducting layer was converted to an insulating layer as the period of the unannealed implants was decreased. The resistivity was found to be modulated for grating periods even below 0.1 μm. In the perpendicular case the gratings were implanted into both on-axis and off-axis, semi-insulating GaAs between two p-type regions and rapid thermal annealed. The minimum half-width of an implanted line was found to be 140 nm in on-axis material. In off-axis material the width was 50 to 90 nm larger depending on dose. In all cases the width is smaller than the 450 nm straggle predicted by Monte Carlo simulations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107050
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