Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1905-1907
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The two fold degeneracy inherent to epitaxial growth of high Tc films on (101) perovskite substrates has been removed successfully. This is demonstrated by single domain, (103) oriented La2−xSrxCuO4 films of 0.04≤x≤0.34 on vicinal (101) SrTiO3 substrates using 90° off-axis sputtering. (101) substrates that have the surface normal rotated about [010] by 0.5°–3.5° produced essentially single crystal films with the c-axis direction determined by the sense of the miscut. Misoriented antidomains (103)' have been eliminated effectively to a percentage less than 1 part in 104. The mechanism for symmetry breaking is understood on the basis of a surface step model in which the energetics promoting single domain growth is derived from nucleation and epitaxy on the (001) face found at surface steps of vicinal substrates. Furthermore, the incommensuration of the c axis interplanar spacings with the a, b, plane lattice parameters in the La2−xSrxCuO4 structure provides a natural selection of (103) domains over (103)' domains. The model predicts the application to other high Tc materials such as the Bi2Sr2CanCun+1Ox, and the Tl2Ba2CanCun+1Ox families.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107149
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