Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1588-1590
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Band-to-band tunneling leakage current is identified as the dominant source of dark current leakage at the gates of In0.53Ga0.47As/InP junction field-effect transistors (FETs) optimized for use in linear, optoelectronic integrated circuit applications. Both the temperature and voltage dependencies of the gate leakage in such devices is studied, and the results are in agreement with calculations based on the FET two-region model modified to include the effects of tunneling. Due to the fundamental nature of this leakage mechanism, and due to the fact that gate leakage induces shot noise, these results suggest that both low noise and high gain can be achieved by limiting the channel doping to ∼9×1016 cm−3 for FETs operated at a frequency of 1 GHz.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107260
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