Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1342-1344
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Light emitters based on real-space transfer devices can be brought about by several mechanisms. The most efficient of these is the injection of minority electrons across a semiconductor heterojunction into a p-type collecting layer. So far, problems associated with the growth of p-type collecting layers have hindered efforts in this area. In this letter we report on light emission caused by the real-space transfer of majority electrons into an n-type collecting layer. We propose a mechanism to account for this light which consists of hole creation by impact ionization of real-space transferred electrons.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107337
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