Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 1205-1207
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Recently, anomalous, asymmetric diffusion of dopants in silicon during silicidation at temperatures as low as 200 °C has been reported. This observation has not been explained satisfactorily so far and therefore presents, a formidable challenge to present Fickian-type diffusion theories. In this letter, the structure of the asymmetric diffusion is analyzed and it is shown that the anomalous diffusion can be consistently explained by postulating the existence of an inhomogeneous stress field as an external driving force in conjunction with stress relaxation mechanisms due to the silicon self-interstitial diffusion. However, at the same time, it is demonstrated conclusively that the hypothesized diffusion in stress fields cannot be effectuated by thermal activation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107406
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