ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ultraviolet photoemission spectroscopy has been used to study the valence-band offsets at GaInAs/InP and InP/GaInAs heterostructures grown by metalorganic molecular-beam epitaxy. High-resolution In-4d/Ga-3d core levels were used. The measured values are 440±50 meV for the "direct'' (GaInAs grown on InP) interface and 260±50 meV for the "inverse'' interface. This band-offset asymmetry is attributed to a difference in the chemical natures of the two interfaces, deduced from the detailed analysis of the core-level spectra.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107418