ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to ∼1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)-(111)B mesas.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105370