Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 2968-2970
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Infrared reflection-absorption measurements of the Si-H stretching vibrations of HF-etched Si(111) surfaces show that the structure of the H-passivated surfaces depends strongly on the nature of the initial silicon-oxide layer. For similar etching conditions, thermal oxides lead to much flatter surfaces than chemical oxides. A new processing sequence involving the removal of thermal oxide by buffered HF (pH=5), followed by etching in a 40% ammonium-fluoride solution, produces a remarkably homogeneous H/Si(111)-(1×1) surface, characterized by a 0.05 cm−1 broad Si-H stretch-mode.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105814
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