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InGaAs/GaAs/InGaP multiple-quantum-well lasers prepared by gas-source molecular beam epitaxy (1991)

Kuo, J. M. ; Chen, Y. K. ; Wu, M. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 2781-2783

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the first room-temperature operation of aluminum-free In0.2Ga0.8As/GaAs/ In0.49Ga0.51P multiple-quantum-well lasers grown by gas-source molecular beam epitaxy. These lasers have low threshold current density Jth of 177 A/cm2, high internal quantum efficiency of 91%, and low internal waveguide loss of 9.1 cm−1. The characteristic temperature T0 is 150 K, which is the highest value ever reported. These results demonstrate that gas-source molecular beam epitaxy is suitable for growing high-quality In0.2Ga0.8As/GaAs/In0.49Ga0.51P lasers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105858

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