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Realization of a photovoltaic transistor based on a steady-state internal polarization effect in asymmetric semiconductor superlattices (1991)

Liu, C. T. ; Liu, J. M. ; Cho, A. Y.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 2787-2789

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have used molecular beam epitaxy to grow at 500 °C a graded InAlGaAs superlattice structure sandwiched by two heavily doped window layers which are directly connected to the gate and source of a discrete field-effect transistor (FET). Upon band-gap illumination, a steady-state photovoltage controllable by the light intensity is generated by the superlattice structure, which then modulates the drain current of the FET to the same amount as does a dc voltage source. The intrinsic response time of the photovoltaic effect is on the order of picoseconds, thus the modulation speed on the drain current is completely limited by the FET.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105860

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