Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 198-200
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Gallium-implanted p+ layers in Si were exposed to atomic hydrogen from a plasma. It was found that very large hydrogen concentrations, up to 7.5 times larger than the peak Ga concentration of 7×1019/cm3, segregated into the p+ layer during treatment at 200 °C. The shape of the hydrogen concentration profile was similar to that of the Ga profile. Ion channeling showed that the H atoms did not occupy simple high-symmetry sites in the lattice, and electron microscopy revealed the presence of extended {111} stacking fault defects associated with the layer of high hydrogen concentration. A mechanism to account for these findings is suggested.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105964
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