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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous occurrence of multiphases in interfacial reactions of ultrahigh vacuum deposited Ti thin films on (111)Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2460-2462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution transmission electron microscopy in conjunction with optical diffractometry have been applied to identify the formation of an amorphous interlayer as well as to detect the presence of Ti5Si3, Ti5Si4, TiSi, and C49-TiSi2 in the interfacial reactions of ultrahigh vacuum (UHV) deposited Ti thin films on atomically clean (111)Si. The discovery of the formation of an amorphous interlayer and as many as four different silicide phases in the initial stages of interfacial reactions of UHV deposited Ti thin films on silicon by high resolution techniques necessitates a modification of the existing theory of the silicide formation in thin-film reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105995
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