Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 2124-2126
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
For the first time, radicals have been added to assist organometallic vapor-phase epitaxial (OMVPE) growth of GaAs at low temperatures. Supplemental t-C4H9 radicals from the pyrolysis of azo-t-butane [(t-C4H9)2N2] were used to increase the growth rate of GaAs from trimethylgallium [TMGa, (CH3)3Ga] and arsine (AsH3) at temperatures as low as 390 °C. Mass spectroscopy studies show that the added radicals enhance the decomposition rates of both TMGa and AsH3. The GaAs growth rate was increased by a factor of 6 at 450 °C. The radical-assisted OMVPE grown samples are, indeed, GaAs based on microprobe analysis. Spectra from Raman scattering experiments further confirm that the GaAs is single crystalline.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106100
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