Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 2136-2138
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A scanning tunneling microscope (STM) is used to locally modify p-n junctions on a scale of a few tens of nanometers. The p-n junction is composed of a phosphorus-doped, hydrogenated amorphous Si [a-Si:H(P)] layer deposited on heavily doped p-type crystalline Si(111). Under conditions of high current densities, with the p-n junction biased in forward direction, the a-Si:H layer is structurally changed leading to a decrease of the junction barrier height. The resulting exponential increase of hole injection into the modified amorphous layer leads to electronically active structures. They are detected by STM owing to their differing electronic properties.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106104
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