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Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy (1991)

Morita, Y. ; Miki, K. ; Tokumoto, H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 1347-1349

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Scanning tunneling microscopy (STM) has been made on an as-prepared Si(111) surface by the 1%-HF treatment. The STM images for both the empty and filled states exhibit regular dots with the threefold symmetry on the flat parts of the surface: the distance between dots measures 2.2 A(ring). The origin of these dots can be ascribed to the H atoms of the trihydride (SiH3) phase on the Si(111) surface. The electrons can tunnel from or to the tail states of the σ (filled) states or the σ* (empty) states around the H atoms for the SiH3 radicals, respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105304

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