ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An a-axis oriented 400 A(ring) YBa2Cu3O7−δ film has been epitaxially deposited on a NdGaO3 (110) substrate by rf magnetron sputtering using a single YBa2Cu5Ox target. An excitation frequency of 94.92 MHz, seven times as high as the conventionally used 13.56 MHz, results in a lower self-bias voltage which reduces degradation of films caused by resputtering due to negatively charged oxygen. Sharp streaks corresponding to the c-axis lattice parameter of YBa2Cu3O7−δ have been observed by reflection high-energy electron diffraction, showing that the c-axis is parallel to the surface of the NdGaO3 substrate and the film surface is smooth on an atomic scale. The crystallinity has been characterized by Rutherford backscattering channeling analysis. A minimum yield, χmin of 3.2%, has confirmed excellent crystallinity of the a-axis oriented film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105316