ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We use GaAs photoluminescence (PL) obtained in situ in an epitaxial growth chamber to measure substrate temperatures from 25 to 450 °C with an accuracy of ±8 °C. Since temperature is obtained directly from the measured GaAs band gap, the approach is free of the problems associated with thermal contacts and emissivity calibration, which are encountered when using thermocouples and pyrometers. The PL technique can be used for any type of sample mounting, and since absolute temperature is measured, it is unnecessary to track the thermal history of the sample.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105507