ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on using a thin (∼200 A(ring)) layer of photodeposited Cd to form high Schottky barrier height contacts to InP and In0.53Ga0.47As. Current-voltage measurements of the Schottky diodes yield barrier heights of 0.70 and 0.55 eV to InP and In0.53Ga0.47As, respectively. The photodeposition process has been integrated with conventional clean room processing to fabricate Au/Cd/In0.53Ga0.47As transistors with high transconductances (∼200 mS/mm) and operating frequencies ( fmax∼30 GHz). X-ray photoelectron spectroscopy of thin Cd photodeposits on InP shows that the process produces an interfacial (∼10 A(ring) thick) Cd-InP reaction zone covered by metallic Cd.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104508