Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 122-124
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The microstructural variation of CoSi2 buried layers formed by 100 keV Co+ implantation at 350 °C into Si (111) is systematically studied. The critical dose dc of Co+ implantation at 100 keV required to form a continuous CoSi2 buried layer after annealing is the same in both Si (111) and (001), ≈1.1×1017 cm−2, corresponding to a threshold peak concentration of 18.5 at. % Co. In addition, we observe continuous buried layers consisting of both A-(fully aligned) and B-(twinned) CoSi2 grains in the (111) samples implanted at doses ≈ dc. The relative fractions of A and B are found to vary with the implanted doses, current densities of the ion beam, and annealing conditions with the B fractions varying from 0% to 100%. Continuous A-type layers are formed only in the samples implanted to doses ≥1.6×1017 cm−2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104947
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