Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1961-1963
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A technique, namely bonding by atomic rearrangement has been invented to realize high quality heteroepitaxy for lasers and optoelectronics. High performance lasers of 1.5 μm wavelength have been fabricated on GaAs substrates using this method. The laser has the same threshold current and quantum efficiency as lasers on InP substrates. No performance degradation has been observed. The transmission electron microscopic results show that the heteroepitaxy is excellent, without a single threading dislocation or stacking fault.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105032
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