Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 2018-2020
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
New GaAs quantum dot structures, called tetrahedral quantum dots (TQDs), are proposed to make a zero-dimensional electron-hole system. The TQDs are surrounded by crystallographic facets fabricated using selective area metalorganic chemical vapor deposition (MOCVD) on (111)B GaAs substrates. The calculated energy sublevel structures of zero-dimensional electrons in a GaAs TQD show large quantum size effects, because electrons are confined three dimensionally. GaAs and AlGaAs tetrahedral facet structures on (111)B GaAs substrates partially etched into a triangular shape were grown using MOCVD. Tetrahedral growth with {110} facets occurs in the triangular areas. The cathodoluminescence intensity map for GaAs tetrahedrons buried in AlGaAs shows the tetrahedral dot array.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105026
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