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Low-threshold operation of a GaAs single quantum well mushroom structure surface-emitting laser (1991)

Yang, Y. J. ; Dziura, T. G. ; Fernandez, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1780-1782

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Room-temperature continuous-wave (cw) lasing operation with a threshold current (Ith) of 3 mA and a pulsed Ith as low as 1.5 mA were achieved in mushroom structure surface- emitting lasers utilizing a 300 A(ring) GaAs single quantum well as an active layer and an AlAs/Al0.1Ga0.9As multilayer as the top and the bottom distributed Bragg reflectors. A series resistance of 250 Ω was obtained on devices with an 8×8 μm2 active region using selective zinc diffusion. A differential quantum efficiency of 12%–20% and a maximum cw light output power exceeding 1 mW were achieved. The emission wavelength was 860 nm with a spectral linewidth of ∼0.5 A(ring).

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105089

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