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Electromigration in p-type ZnSe:Li (1991)

Haase, M. A. ; DePuydt, J. M. ; Cheng, H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1173-1174

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Electromigration has been observed in certain Li-doped p-type ZnSe epitaxial layers. A correlation is observed between the magnitude of the electromigration and the degree of compensation in the layers, which is consistent with electromigration of Li interstitials. Significantly, uncompensated layers show no electromigration, illustrating that Li atoms on Zn lattice sites (acceptors) are stable at room temperature. The effects of electromigration on the behavior of ZnSe blue light-emitting diodes is considered, and shown to be beneficial in devices with compensated p-type layers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104355

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