Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1077-1079
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a simple method to increase the peak current density in a double-barrier resonant tunneling structure by using a small band-gap emitter spacer layer. We have fabricated AlAs/GaAs/AlAs resonant tunneling structures using a Ga1−xInxAs spacer layer in the emitter. The peak current density was increased systematically with the increasing indium content by a factor ranging from 2.5 at x=0.05 to 5 at x=0.2 from the value at x=0. The increased peak current density was accompanied by increases in the peak voltage and peak-to-valley ratio. The lowering of the bottom of electron energy distribution in the GaInAs emitter spacer layer is shown to explain both the peak current and voltage increases. In the sequential tunneling picture, the peak current increases because of the increase in the number of resonant electrons which occurs if the bottom of energy distribution is lowered. We also report for the first time a strong bistability in the current-voltage characteristics at T≤240 K in the asymmetric spacer layer structure (GaInAs emitter, GaAs collector) in an otherwise symmetric structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104376
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