Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 683-685
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb. InAs and GaSb have a type II staggered band alignment; hence, the negative differential resistance arises from the same mechanism as in a p+-n+ tunnel diode. Room-temperature peak current densities of 8.2×104 A/cm2 and 4.2×104 A/cm2 were measured for structures with and without undoped spacer layers at the heterointerface, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103591
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