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Molecular beam epitaxy grown PbEuSeTe buried-heterostructure lasers with continuous wave operation at 195 K (1990)

Feit, Z. ; Kostyk, D. ; Woods, R. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 2891-2893

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Lattice-matched buried-heterostructure (BH) PbEuSeTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Lasers with 4-μm-wide and 0.6-μm-thick buried PbTe and Pb0.9976Eu0.0024Se0.0034Te0.9966 active layers were grown. Record continuous wave (cw) operating temperatures of 195 and 183 K were measured for BH diode lasers with binary PbTe active layer, and quaternary PbEuSeTe (0.22 at. % Eu) active layer compositions, respectively. For PbTe active layer BH lasers, threshold currents of 3.2 mA (80 K) and 36.2 mA (140 K) were measured in cw operation mode. For Pb0.9976Eu0.0024Se0.0034Te0.9966 BH active layer lasers, threshold currents of 2.9 mA (80 K) and 23.4 mA (140 K) were measured in cw operation mode.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103768

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