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Thermal donor formation in Fe-doped semi-insulating InP (1990)

von Bardeleben, H. J. ; Bourgoin, J. C. ; Kainosho, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 2464-2465

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Single wafers of Fe-doped semi-insulating InP have been annealed under Si3N4 capping in the 663–760 °C temperature range. Electron paramagnetic resonance (EPR) measurements performed on single crystals from different parts of the wafers show that the thermal annealing introduces various deep donor centers in concentration up to 1016 cm−3. The donor formation rate increases strongly for annealing temperatures higher than 700 °C. From EPR transient spectroscopy the thermal ionization energy of the dominant donor has been determined to Ec−0.34 eV. The results are correlated with previous electrical resistivity and photoluminescence measurements.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103852

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