ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full width at half maximum ∼2 μm) non-Gaussian profile centered at ∼31 μm in GaAs, ∼36 μm in InP, and ∼46 μm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10% larger than theoretical predictions. Changes in the electrical, optical, and structural properties of the material were measured by transmission electron microscopy (TEM), photoluminescence, and spreading resistance profiling. In the as-implanted Si, the maximum perturbation in the electrical properties occurs at ∼37 μm. No defects are visible by TEM in any of the as-implanted semiconductors for oxygen ion doses of 1.35×1015 cm−2 but the photoluminescent intensity in GaAs and InP is reduced by more than an order of magnitude as a result of this type of implantation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103906
