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Growth of highly oriented tin oxide thin films by laser evaporation deposition (1990)

Dai, C. M. ; Su, C. S. ; Chuu, D. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 1879-1881

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 A(ring) per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3 Ω cm. The visible transmittance (between 4000 and 7000 A(ring)) is above 75%.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103998

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