Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1289-1291
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
AlGaAs/GaAs surface-emitting laser diodes (SELDs) with distributed Bragg reflectors (DBRs) and current blocking layers are fabricated with the combination of a two-step epitaxial growth and the reactive ion beam etching (RIBE) technique. An Al0.1Ga0.9As/Al0.7Ga0.3As multilayer and an amorphous silicon (a-Si)/silicon dioxide (SiO2) multilayer are employed for the lower and upper mirrors, respectively. The active region has a 5×5 μm or 4 μm φ area and a 0.8 μm thickness. The minimum threshold current is 3.3 mA under pulsed condition and 4.1 mA under continuous wave (cw) operation at 12 °C with junction-side-up configuration. Stable single longitudinal mode is observed, and far-field pattern (FFP) indicates higher transverse mode operation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104096
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