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Digital chemical vapor deposition of SiO2 (1990)

Nakano, M. ; Sakaue, H. ; Kawamoto, H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 1096-1098

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104284

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