Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 280-282
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Nonplanar silicon oxidation in a dry O2+NF3 gas mixture has been investigated. Oxide morphologies at silicon corners following 800 °C oxidation in dry O2 and in dry O2+NF3 gas are observed using a scanning electron microscope. While a serious decrease in oxide thickness at convex silicon corners is observed following oxidation in dry O2, no inhibition of oxide growth occurs and the Si/SiO2 interface is smoothly rounded off at the corners following oxidation in dry O2+NF3. The effects of adding NF3 gas to a dry O2 atmosphere on nonplanar oxidation are discussed. Furthermore, a sacrificial oxidation in dry O2+NF3 prior to forming the thin capacitor oxide is found to be very effective for reducing the oxide leakage current for a trenched capacitor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102808
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