ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used Acheson and Lely α-SiC crystal substrates. We report the CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process. The single-crystal 6H-SiC films were grown on wafers oriented 3° to 4° off the (0001) plane toward the 〈112¯0〉 direction. The films, up to 12 μm thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102492