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Absolute pressure dependence of the second ionization level of EL2 in GaAs (1990)

Bliss, D. E. ; Nolte, D. D. ; Walukiewicz, W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1143-1145

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the results of deep level transient spectroscopy experiments with the second ionization level of the double donor defect (EL2) under uniaxial stress in p-type GaAs. We measure the shift in the hole emission rate as a function of stress applied in the [100] and [110] directions. By modeling the valence band with two independently displacing bands and appropriately derived effective masses, we determine the absolute hydrostatic pressure derivative of the defect to be 39±15 meV GPa−1. The shear contribution is negligible. These results are very different from those obtained for the first ionization level, which has a much higher absolute pressure derivative of 90 meV GPa−1.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102544

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