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Low-temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition (1990)

Ludowise, M. J. ; Biswas, D. ; Bhattacharya, P. K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 958-960

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Ga1−x Inx As1−y Py /InP (x=0.72, y=0.39) lattice-matched quantum wells (QWs) are grown by low-pressure metalorganic chemical vapor deposition on (100) and 3° misoriented substrates, using different variations of growth technique. Low-temperature (10 K) photoluminescence is used to characterize the QWs. We find that substrates oriented closely to (100) (no intentional misorientation) produce QWs of consistently higher quality as judged by the width of the n=1 photoluminescence peak. The use of growth interruptions at the well interfaces severely degrades the QW quality. The narrowest peak observed is 5.8 meV wide from a 70-A(ring)-wide well.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102591

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