Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 2742-2744
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present device characteristics of a field-effect, unipolar, resonant tunneling transistor. An oscillatory tunneling current in the transfer characteristics is observed for the first time. Our observation confirms a recent hypothesis that a mere three-to-two dimensional resonant tunneling can occur when scattering rate is less than the attempt frequency of tunneling electrons in the quantum well.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101940
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |