Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1768-1770
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The influence of concurrent Zn diffusion on the interdiffusion in a Gax In1−x Asy P1−y -InP heterostructure (x=0.28, y=0.61) was investigated using Auger electron spectroscopy and secondary-ion mass spectrometry. The measured profiles showed that the Zn diffusion (600 °C, 1–4 h) predominantly enhanced the cation (In-Ga) interdiffusion. The result could not be interpreted by the Zn-vacancy complex model. Under conditions of a group V overpressure, our results suggest that cation interstitials may control both the rate of Zn diffusion and the mixing of the group III sublattices in the InP-based alloy system.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102213
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