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Effect of stacking sequence on valence bands in Ga/As/Ge (001) monolayer superlattices (1989)

Saito, T. ; Ikoma, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 1300-1302

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Valence bands of Ga/As/Ge (001) monolayer superlattices (MLSLs) are calculated by Harrison's tight-binding method. The MLSLs have two possible types of growth cycles: a (Ga,As,Ge,Ga,As,Ge) cycle for an antiphase type (AP type) and a (Ga,As,Ge,As,Ga,Ge) cycle for a normal phase type (NP type). Cations and anions in the AP type occupy "antisites'' of the zinc blende structure while those in the NP type occupy only "normal sites.'' The two types have distinct features of the valence bands concerning degeneracy of the bands at the zone boundary, splitting of the valence-band maximum due to the tetragonal symmetry, and valence-band discontinuity in a (bulk Ge)/(the MLSL) junction.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101638

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