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Electrical characterization of p-type ZnSe (1989)

DePuydt, J. M. ; Haase, M. A. ; Cheng, H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 1103-1105

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: ZnSe epitaxial layers doped with lithium have been found to be p type with resistivities as low as 2.9 Ω cm. The majority-carrier types of these films were determined using both capacitance-voltage and potential profiling techniques. The sample resistivities were obtained using ac resistivity measurements and potential profiling. Uncompensated acceptor densities have been measured to be as high as 8×1016 cm−3 using capacitance-voltage profiling. Current-voltage traces taken with evaporated and sputtered gold contacts typically show reverse breakdown which is consistent with avalanche breakdown in these materials.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101670

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