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Dopant redistribution during oxidation of SiGe (1989)

LeGoues, F. K. ; Rosenberg, R. ; Meyerson, B. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 751-753

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe-covered Si samples reported previously.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100882

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