Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 347-349
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial Si layers with low dislocation density were grown on GaAs substrates by pyrolysis using disilane. The dislocation density evaluated from SECCO etching (HF:H2 SO4 :K2 Cr2 O7 =100 cc:50 cc:2g) was less than 104/cm2, which is lower by two orders of magnitude than that of the GaAs layer on Si substrates. We found that the electron mobility of Si layers on GaAs substrates could be raised by decreasing the growth rate and a high mobility value the same as that of a homoepitaxial layer was obtained, although the Si layers were contaminated by an arsenic impurity of 1018 cm−3 .
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100965
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